Research

Kanghee Shin aims to improve the efficiency of power electronic systems by leveraging wide bandgap (WBG) power devices, with the ultimate goal of achieving carbon neutrality and addressing global energy inequality.

WBG semiconductors (SiC, GaN, Ga2O3, Diamond, AlN) permit power devices to operate at much higher temperatures, voltages, and frequencies—making the power electronic modules using these materials significantly more powerful and energy efficient than those made from conventional semiconductor materials.

WBG semiconductors go beyond the limitations of Si counterparts for power electronics applications.

• High thermal stability and miniaturization of form factor are possible, as are High maximum junction temperature (TJ,max) and operating frequencies

• Low on-resistance (RON,SP)
  : Low conduction losses

• Low parasitic capacitance (Ciss, Coss, and Crss) and gate charge (QG)
  : Low switching losses in hard-switching applications

• Near-zero reverse recovery charge (Qrr) and reverse recovery time (trr)
  : Low switching losses in soft-switching applications

• High breakdown voltage (VBR)