Projects
If you want to collaborate with Kanghee Shin, please feel free to contact him at any time.
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On-Going Projects
On-Going Projects
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Terminated Projects
Terminated Projects
Development of Commercialization Technology for Heteroepitaxial Gallium Oxide Wafer Templates for UV Sensor Application
Ministry of Science and ICT, Grant No. RS-2025-02222547 (Apr. 2025 – Aug. 2026)
Developed and Optimized the Layout/Batch Process of Heteroepitaxially Grown Ga₂O₃ Photodiodes for UVC Sensors
Research on Autonomous eVTOL Core Convergence Technology for Urban Air Mobility (UAM)
Research on Autonomous eVTOL Core Convergence Technology for Urban Air Mobility (UAM)
Ministry of Science and ICT, Grant No. IITP-2024-RS-2024-00437494 (Feb. 2025 – Aug. 2026)
Designed and Developed the Medium-Voltage Ga2O3 Devices for UAM-eVTOL Applications
Development of Low-Loss 1.2 kV-class Ga₂O₃ Transistors
Development of Low-Loss 1.2 kV-class Ga₂O₃ Transistors
Ministry of Science and ICT, Grant No. RS-2022-00144027 (Feb. 2025 – Dec. 2025)
Developed the Low-Resistivity Ohmic Contact Methods for 1.2 kV-Class Ga2O3 Transistors
Development of High-Efficiency 650 V SiC MOSFETs for Home Appliance
Development of High-Efficiency 650 V SiC MOSFETs for Home Appliance
Development of Technology with Cooperation Between Universities, Industries (KEC Inc.) and Local Governments Based on Regional Industry (Nov. 2023 – Jul. 2024)
Benchmarked 650-V Class High-Efficiency SiC MOSFET for Home Appliances in collaboration with KEC Inc., Gumi, Republic of Korea
Development of Localized Technology for High-Reliability SiC Power Device for EPC Using High-Quality Oxide Films and Structure for Relaxation of Electric Field Crowding and Hermetic Package
Ministry of Science and ICT, Grant No. RS-2024-00423646 (Apr. 2024 – Aug. 2024)
Devised and Validated Radiation-Hardened 650V SiC MOSFET Chip for Space Applications
Active Cell Design of 1.2 kV-Class SiC MOSFETs for Electric Vehicles
Active Cell Design of 1.2 kV-Class SiC MOSFETs for Electric Vehicles
Korea Institute for Advancement of Technology, Grant No. P002216 (Feb. 2024 – Dec. 2024)
Devised and led a 1.2 kV‑class SiC MOSFET development project for xEV traction inverter applications in collaboration with SK KEYFOUNDRY Inc., Cheongju, Republic of Korea.
Evaluation using commercial components and understanding of electrical characteristic within their datasheets
Korea Institute for Advancement of Technology, Grant No. P002216 (Sep. 2023 – Dec. 2023)
Characterized and analyzed both n-type 4H-SiC MOSCAP and 1.2 kV/17 A 4H-SiC Trench MOSFET in collaboration with Korea Multi-Purpose Accelerator Complex (KOMAC), Korea Atomic Energy Research Institute (KAERI), Gyeongju, Republic of Korea.
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