Journal Papers

Kanghee Shin has published 6 peer-reviewed articles. He aims to have his papers published in some prominent journals of IEEE Electron Device Society (EDS), IEEE Power Electronics Society (PELS), and Nature Publications.

The publications are updated on Google Scholar :)

Manuscripts

[8] Threshold Voltage Enhancement in p-GaN Gate AlGaN/GaN HEMTs Using a Sputtered p-Type NiO Layer (TBD)

Young-Joon Kim, Kanghee Shin, You Seung Rim, and Ho-Young Cha

IEEE Electron Device Letters (In Preparation)

IF: 4.6 (Q2, ENGINEERING, ELECTRICAL & ELECTRONIC)

#GaN #Power Electronics #Power HEMTs #p-GaN Gate #Sputtered p-NiO Layer #Threshold Voltage #Pulsed I–V

[7] Recent Progress in Ga₂O₃ Research: Materials Growth, Device Engineering, and Emerging Technologies (TBD)

Collaborative with Leibniz-Institut für Kristallzüchtung (IKZ)

Materials Today Physics (In Preparation)

IF: 9.3 (Q1, PHYSICS, APPLIED)

#Review and Perspective #Ga₂O₃ #Next-Generation Power Semiconductor #Power Electronics #Material Growth #Electron Devices #Application Technologies

[6] TiN/4H-SiC Schottky Interfaces: Robust UV and X-ray Detection, Imaging in Extreme Environments

Chowdam Venkata Prasad†, Beomjun Park†, Sunjae Kim†, Kanghee Shin†, Jin-Woo Choi, Hyeon-Do Kang, Minseok Ki, Jeongho Kim, Jong-Min Oh, Wan Sik Hwang, You Seung Rim, and Sang-Mo Koo
(†Contributed equally to this work)

Laser & Photonics Reviews (To Be Submitted)

IF: 9.7 (Q1, OPTICS)

#4H-SiC #Schottky Rectifier #DLTS #X-Ray Detection #Interface Engineering #Medical Imaging #Radiation Monitoring

[5] Low-Loss Reverse Conduction and Switching Behaviors of Ga₂O₃ CAVET with Embedded SBD

Kanghee Shin, Madani Labed, Jang Hyeok Park, Ho Jung Jeon, Chowdam Venkata Prasad, and You Seung Rim

IEEE Transactions on Electron Devices (To Be Submitted)

IF: 3.6 (Q2, ENGINEERING, ELECTRICAL & ELECTRONIC)

#Ga2O3 #SBD #CAVET #Current Blocking Layer #Low Loss #Monolithic Integration #Power Electronics #Reverse Conduction #Switchinig Characteristics #TCAD

[4] Mg-Driven Interfacial Reconstruction for Ultralow-Resistance Ohmic Contacts on (001) β-Ga2O3

Madani Labed, Kanghee Shin, Myeong Geun Yu, and You Seung Rim

Journal of Alloys and Compounds (Under Review)

IF: 6.7 (Q1, METALLURGY & METALLURGICAL ENGINEERING)

#Ga2O3 #Ohmic Contact #Interface Engineering #Low Work Function #Metal Stack

[3] Enhanced Breakdown Voltage and Thermal Stability in β-Ga₂O₃ Heterojunction Power Diodes through Al-NiO Alloy Engineering

Ho Jung Jeon, Jang Hyeok Park, Kanghee Shin, Tae Yeon Kim, Hoyeon Moon, Mileu Bang, Jungwan Cho, Hyemin Kang, Bo-In Park, Chul-Ho Lee, Madani Labed, and You Seung Rim

Advanced Composites and Hybrid Materials (Under Review)

IF: 15.5 (Q1, MATERIALS SCIENCE, COMPOSITES)

#Ga2O3 #BV #Co-Sputtering #Alloy Engineering #Power Rectifiers #Heterojunction

[2] 3.3 kV Vertical NiO/Ga₂O₃ p–n Heterojunction Diodes with Ring-Assisted Junction Termination Extension

Kanghee Shin, Madani Labed, Ho Jung Jeon, Jang Hyeok Park, Seunghyeon Park, Chowdam Venkata Prasad, Hyemin Kang, and You Seung Rim

Applied Physics Letters (Under Review)

IF: 3.8 (Q2, PHYSICS, APPLIED)

#Ga2O3 #NiO #Power Electronics #Power Semiconductor Devices #Breakdown Voltage #Edge Termination #Junction Termination Extension #TCAD

[1] Monolithic Multispectral Perovskite Photodetectors Enabled by ALD-Engineered SnOx Interlayers

Yunhwa Hong, Yong Hyeon Kim, Saehan Choi, Jung Myung Kim, Kyo June Hwang, Jisoo Paik, Sangheon Lee, Seung June Oh, Kanghee Shin, Naesung Lee, Yoonsung Nam, You Seung Rim, Young Jin Choi, Sungkyu Kim, Dong Hoe Kim, Kwang Heo

Advanced Science (Under Review)

IF: 14.1 (Q1, MATERIALS SCIENCE, MULTIDISCIPLINARY)

#Halide Perovskite Photodetector #Monolithic Vertical Integration #Multispectral Photodetection #Wavelength-Selective Detection #Atomic Layer Deposition #SnOx Interfacial Layer

Peer-Reviewed Articles

[6] Phase-engineered rutile GeO₂ for solar-blind DUV photodetectors

Madani Labed, Jang Hyeok Park, Jeongseo Moon, Mileu Bang, Kanghee Shin, Bo-In Park, and You Seung Rim

Journal of Alloys and Compounds, 1080, 190141.

DOI: 10.1016/j.jallcom.2026.190141
IF: 6.7 (Q1, METALLURGY & METALLURGICAL ENGINEERING)

#r-GeO₂ #Solar-Blind Photodetectors #Ultra-Wide Bandgap #Diffusion Suppression

[5] Ultrawide bandgap NiCo/β-Ga2O3 Schottky detectors for solar-blind UV response, low-dose X-ray detection, and X-ray imaging

Chowdam Venkata Prasad, Sunjae Kim, Beomjun Park, Thanh Huong Vo, Kanghee Shin, Seung-Hyun Park, Jang Hyeok Park, Geon-Hee Lee, Ho Jung Jeon, Yu Jun Cheon, Geoffrey Tse, Jong-Min Oh, Sang-Mo Koo, Wan Sik Hwang, and You Seung Rim

Surfaces and Interfaces, 95, 109657.

DOI: 10.1016/j.surfin.2026.109657
IF: 6.0 (Q1, PHYSICS, APPLIED)

#Ga2O3 #Schottky Rectifier #UV Photodetector #DLTS #X-Ray Detection #Low-Dose Sensitivity #Medical Imaging #Radiation Monitoring

[4] Interface-Engineered Ultrawide-Bandgap TiN/β-Ga2O3 Schottky Diodes for Radiation-Hard X-ray Detection and Imaging

Beomjun Park†, Chowdam Venkata Prasad†, Kanghee Shin†, Seung-Hyun Park, Sunjae Kim, Geoffrey Tse, Ho Jung Jeon, Jang Hyeok Park, Jichul Seo, Jangwon Byun, Jiwon Seo, Seungho Song, Byungdo Park, Wonho Lee, Jeongho Kim, Jong-Min Oh, Sang-Mo Koo, and You Seung Rim
(†Contributed equally to this work)

ACS Applied Electronic Materials, 8(9), 4075–4088.

DOI: 10.1021/acsaelm.6c00262
IF: 4.7 (Q2, ENGINEERING, ELECTRICAL & ELECTRONIC)

#Ga2O3 #Schottky Rectifier #DLTS #X-Ray Detection #Interface Engineering #Medical Imaging #Radiation Monitoring

[3] Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic contacts to (001) β-Ga2O3

Madani Labed†, Kanghee Shin†, Mohammad Tauquir Alam Shamim Shaikh, Yu Jun Cheon, Jang Hyeok Park, Bo-In Park, Stephen J. Pearton, and You Seung Rim
(†Contributed equally to this work)

ACS Nano, 20(1), 849–863.

DOI: 10.1021/acsnano.5c15851
IF: 17.3 (Q1, MATERIALS SCIENCE, MULTIDISCIPLINARY)

#Ga2O3 #Ohmic Contact #MSM Photodetector #UV-C #Interface Engineering #Low Work Function #Metal Stack #TEM Study

[2] Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications

Kanghee Shin, Dongkyun Kim, Minu Kim, Junho Park, and Changho Han

Electronics, 14(1), 163. (Selected as the Editor's Choice)

DOI: 10.3390/electronics14010163
IF: 2.9 (Q2, ENGINEERING, ELECTRICAL & ELECTRONIC)

#SiC #MOSFETs #Split Gate #E-field Crowding #TCAD Simulation #Gate Charge #Short-Circuit #SCWT #Switching FOM

[1] Improved Switching Characteristics of 1.2 kV P-shielded Split Gate SiC MOSFETs

Kanghee Shin, Dongkyun Kim, Minu Kim, Junho Park, and Ogyun Seok

Journal of Electrical Engineering & Technology, 20(2), 1067–1075.

DOI: 10.1007/s42835-024-02132-y
IF: 2.0 (Q3, ENGINEERING, ELECTRICAL & ELECTRONIC)

#SiC #MOSFETs #Split Gate #E-field Crowding #TCAD Simulation #Gate Charge #Double Pulse Test