Conferences

Kanghee Shin has given 6 presentations at academic conferences. The major conferences where he presented include KCS, APWS, and IWGO. He aims to present at flagship conferences such as IEDM, ISPSD, and DRC.

Oral Presentation

[1] Kanghee Shin, Ho Jung Jeon, Jang Hyeok Park, and You Seung Rim, "Multi-Kilovolt Vertical NiO/β-Ga₂O₃ p–n Heterojunction Diodes with Ring-Assisted Junction Termination Extension," in The 33rd Korean Conference on Semiconductors (KCS 2026), Jan. 2026, Jeongseon, Republic of Korea.

Poster Presentation

[14] Young-Joon Kim, Kanghee Shin, You Seung Rim, Ho-Young Cha, "Threshold Voltage Enhancement in p-GaN Gate AlGaN/GaN HEMTs Using a Sputtered p-Type NiO Layer," in The 12th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2026), Oct. 2026, Xi'an, China.

[13] Kanghee Shin, Ho Jung Jeon, Jang Hyeok Park, Madani Labed, and You Seung Rim, "Multi-Kilovolt Vertical NiO/Ga₂O₃ p–n Heterojunction Diodes with Ring-Assisted Junction Termination Extension," in The 6th International Workshop on Gallium Oxide and Related Materials (IWGO-6), Aug. 2026, College Park, Maryland, United States.

[12] Jang Hyeok Park, Kanghee Shin, and You Seung Rim, "Fabrication of Quasi-Vertical α-Ga₂O₃ Schottky Barrier Diodes on Sapphire," in The 22nd International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXII), Jul. 2026, Jeju, Republic of Korea.

[11] Jin Kyu Seo, Huijun Cha, Kanghee Shin, and You Seung Rim, "Design of α-Ga₂O₃ Quasi-Vertical Schottky Barrier Diodes on Sapphire Substrates with Field Plate Engineering," in KIEEME Annual Summer Conference 2026, Jun. 2026, Busan, Republic of Korea. (Won Participation Prize 🏆)

[10] Huijun Cha, Kanghee Shin, Jin Kyu Seo, and You Seung Rim, "Design of BaTiO₃ Field Oxide-Assisted Multi-Zone p-NiO Junction Termination Extension for High Voltage β-Ga₂O₃ Power Devices," in KIEEME Annual Summer Conference 2026, Jun. 2026, Busan, Republic of Korea. (Won Grand Prize 🏆)

[9] Kanghee Shin, Ho Jung Jeon, Jang Hyeok Park, Seung Jun Park, Madani Labed, and You Seung Rim, "Design of Ring-Assisted Junction Termination Extension for High-Voltage Vertical NiO/β-Ga₂O₃ p–n Heterojunction Diodes," in The 8th International Conference on Advanced Electromaterials (ICAE 2025), Nov. 2025, Jeju, Republic of Korea.

[8] Kanghee Shin, Ho Jung Jeon, Yu Jun Cheon, Madani Labed, and You Seung Rim, "Design of Ring-Assisted Junction Termination Extension for High-Voltage Vertical NiO/β-Ga₂O₃ p–n Heterojunction Diodes," in KIEEME Annual Summer Conference 2025, Jun. 2025, Busan, Republic of Korea.

[7] Kanghee Shin, Dongkyun Kim, Minu Kim, Junho Park, Hyowon Yoon, and Ogyun Seok, "A Design of 1.2 kV SiC MOSFET with Split-Gate for Improvement of Breakdown Characteristics and HF-FOM," in The 11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024), Oct. 2024, Busan, Republic of Korea.

[6] Kanghee Shin, Dongkyun Kim, Minu Kim, Junho Park, Hyowon Yoon, and Ogyun Seok, "A Design of 1.2 ㎸ SiC MOSFETs with Split-Gate for the Improvement of Breakdown Characteristics (Split-Gate가 적용된 1.2 kV급 SiC MOSFET의 항복특성 개선을 위한 설계)," in The 55th KIEE Summer Conference 2024, Jul. 2024, Jeju, Republic of Korea. [Proceeding]

[5] Gyuhyeok Kang, Yeongguen Park, Hyowon Yoon, Sangyeob Kim, Jinhun Kim, Sumin Park, Dusan Baek, Jungtae Kim, Kanghee Shin, Ikjae Kwon, Junggu Kim, and Ogyun Seok, "Design of 1.2 ㎸ SiC MOSFET embedded SBD on JFET for enhancing switchingcharacteristics (스위칭 특성 향상을 위한 JFET 영역 SBD가 내장된 1.2 ㎸ SiC MOSFET의 설계)," in The 55th KIEE Summer Conference 2024, Jul. 2024, Jeju, Republic of Korea. [Proceeding]

[4] Gukhwa Jeon, Chaeyun Kim, Yeongeun Park, Gyuhyeok Kang, Kanghee Shin, Minhyeok Jeong, Dong-Seok Kim, and Ogyun Seok, "Study on Electrical Characteristics Variation of 1.2 kV SiC MOSFET Due to Gamma-ray Irradiation (감마선 조사에 따른 1.2 kV SiC MOSFET의 전기적 특성 변화 연구)," in The KIEE Electro-physics & Application Society Fall Conference 2023, Oct. 2023, Jeju, Republic of Korea. [Proceeding]

[3] Gwangjae Kim, Sangyeob Kim, Hyowon Yoon, Kanghee Shin, and Ogyun Seok, "The analysis on the electric characteristics of SiC PiN diode according to the hole lifetime (정공 수명 변화에 따른 SiC PiN 다이오드의 전기적 특성 분석)," in The 54th KIEE Summer Conference 2023, Jul. 2023, Pyeongchang, Republic of Korea. [Proceeding]

[2] Hyowon Yoon, Jinhun Kim, Chaeyun Kim, Yeongeun Park, Gwangjae Kim, Sangyeob Kim, Kanghee Shin, Sumin Park and Ogyun Seok, "A 1.2 kV SiC MOSFET with buried oxide to improve gate charge characteristics (Buried oxide 구조 활용을 통한 1.2 kV SiC MOSFET의 Gate charge 특성 개선 연구)," in Summer Annual Conference of IEIE 2023, Jun. 2023, Jeju, Republic of Korea. [Proceeding]

[1] Chaeyun Kim, Gukhwa Jeon, Hyowon Yoon, Yeonguen Park, Gwangjae Kim, Sangyeob Kim, Gyuhyeok Kang, Kanghee Shin, Dong-Seok Kim, and Ogyun Seok, "Analysis of proton irradiation effects on SiC MOSFETs (SiC MOSFET 양성자 조사 영향 분석)," in Summer Annual Conference of IEIE 2023, Jun. 2023, Jeju, Republic of Korea. [Proceeding]